Epitaxial structure of n-face group iii nitride, active device, and method for fabricating the same with integration and polarity inversion

ABSTRACT

The present invention provides an epitaxial structure of N-face group III nitride, its active device, and the method for fabricating the same. By using a fluorine-ion structure in device design, a 2DEG in the epitaxial structure of N-face group III nitride below the fluorine-ion structure will be depleted. Then the 2DEG is located at a junction between a i-GaN channel layer and a i-Al y GaN layer, and thus fabricating GaN enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs), hybrid Schottky barrier diodes (SBDs), or hybrid devices. After the fabrication step for polarity inversion, namely, generating stress in a passivation dielectric layer, the 2DEG will be raised from the junction between the i-GaN channel layer and the i-Al y GaN layer to the junction between the i-GaN channel layer and the i-Al x GaN layer.

FIELD OF THE INVENTION

The present invention relates generally to an epitaxial structure, andparticularly to an epitaxial structure of N-face (Nitride-Face) groupIII nitride grown in series on semiconductors. The advantage of thepresent invention is that i-Al_(x)GaN grown on the N-face polarity willhave less defects. By using the fabrication method according to thepresent invention, namely, by taking advantages of the stress generatedby the passivation dielectric layer, the N-face polarity can be invertedto the Ga-face polarity. Thereby, the 2DEG can be transferred from theinterface of i-GaN/i-Al_(x)GaN in the i-GaN channel layer to theinterface of i-AlGaN/i-GaN in the i-GaN channel layer. In addition togiving lower i-Al_(x)GaN surface traps, while the i-Al_(y)GaN became therole of blocking buffer trap electrons from entering the channel layer,and hence easing the problem of current collapse. Furthermore, thepresent invention also provides a gate moatmoat structure located in thei-Al_(x)GaN layer and on both sides of the fluorine-ion structure.

BACKGROUND OF THE INVENTION

According to the prior art, the most common structures to achieve anenhancement-mode AlGaN/GaN high electron mobility transistor (E-modeAlGaN/GaN HEMT) include: I. Ga-face p-GaN gate E-mode HEMT structure,and 2. N-face Al_(x)GaN gate E-mode HEMT structure. Nonetheless, asimplied by their names, only the gate region will be p-GaN or AlxGaN.

The most common fabrication method is to grow an additional P-GaN layeron the tradition epitaxial structure of depletion-mode (D-mode)AlGaN/GaN HENIT. Afterwards, etch p-GaN outside the gate region usingdry etching while maintaining the completeness of the thickness of theunderlying epitaxial layer. Because if the underlying epitaxial layer isetched too much, the two-dimensional electron gas (2DEG) will not beformed at the interface AlGaN/GaN of a Ga-face p-GaN gate E-mode HEMTstructure. Thereby, using dry etching is challenging because the etchingdepth is hard to control and nonuniformity in thickness still occurs inevery epitaxial layer of an epitaxial wafer Besides, both this epitaxialstructure and the normal D-Mode AlGaN/GaN HEMT epitaxial structure facethe problems related to current collapse, such as buffer traps andsurface traps, requiring further resolution.

Accordingly, to improve the above drawbacks, the present inventionprovides a novel epitaxial structure of N-face group III nitride, anactive device formed by using the epitaxial structure after polarityinversion, and the fabrication method for integration.

SUMMARY

An objective of the present invention is to provide a novel epitaxialstructure of N-face group III nitride, an active device formed by usingthe epitaxial structure after polarity inversion, and the fabricationmethod for integration for solving the process bottleneck encountered inthe epitaxial structure of HEMTs. In addition, multiple types ofhigh-voltage and high-speed active devices can be formed on thesubstrate of the epitaxial structure of N-face group III nitride at thesame time.

Another objective of the present invention is make the 2DEG in anepitaxial structure of N-face group III nitride under the fluorine-ionstructure become depleted after polarity inversion of the active region(AlGaN/GaN/AlGaN). Thereby. E-mode AlGaN/GaN high electron mobilitytransistors (HEMTs), hybrid Schottky barrier diodes (SBDs), or hybridE-mode AlGaN/GaN HEMTs can be fabricated.

In order to achieve the above objectives, the present invention providesan epitaxial structure of N-face AlGaN/GaN, which comprises a siliconsubstrate, a carbon-doped (C-doped) buffer layer on the siliconsubstrate, a C-doped GaN layer on the C-doped buffer layer, ani-Al_(y)GaN layer on the C-doped GaN layer, an i-GaN channel layer onthe i-Al_(y)GaN layer, an i-Al_(x)GaN layer on the i-GaN channel layer,a fluorine-ion structure in the i-Al_(x)GaN layer, a first gatedielectric layer on the fluorine-ion structure, where x=0.1˜0.3 andy=0.05˜0.75, and a gate moat structure located in the i-Al_(y)GaN layerand on both sides of the fluorine-ion structure.

By using the epitaxial structure of N-face AlGaN/GaN, the presentinvention further provides multiple types of HEMTs and SBD deviceshaving the fluorine-ion structure and the moat structure as well as themethod for fabricating the same with integration

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A shows a first structure diagram of the epitaxial structure ofthe N-face AlGaN/GaN HEMT according to the present invention;

FIG. 1B shows a second structure diagram of the epitaxial structure ofthe N-face AlGaN/GaN HEMT according to the present invention;

FIG. 2A shows a first structural schematic diagram offluorine-ion-implanted E-mode N-face AlGaN/GaN HEMT with polarityinversion and gate moat structure according to the present invention;

FIG. 2B shows a second structural schematic diagram offluorine-ion-implanted E-mode N-face AlGaN/GaN HEMT with polarityinversion and gate moat structure according to the present invention;

FIG. 2C shows a top view of fluorine-ion-implanted E-mode N-faceAlGaN/GaN HEMT with polarity inversion and gate moat structure accordingto the present invention;

FIG. 3A shows a schematic diagram of forming the moat structure, thesource ohmic-contact electrode, and the drain ohmic-contact electrode onthe epitaxial structure of N-face AlGaN/GaN according to the presentinvention;

FIG. 3B-1 shows a schematic diagram of the device isolation processaccording to the first embodiment of the present invention;

FIG. 3B-2 shows a schematic diagram of the device isolation processaccording to the second embodiment of the present invention;

FIG. 3C-1 shows a schematic diagram of forming the fluorine-ionstructure on the structure shown in FIG. 3B-1;

FIG. 3C-2 shows a schematic diagram of forming the fluorine-ionstructure on the structure shown in FIG. 3B-2;

FIG. 3D-1 shows a schematic diagram of forming the first gate dielectriclayer on the structure shown in FIG. 3C-1;

FIG. 3D-2 shows a schematic diagram of forming the first gate dielectriclayer on the structure shown in FIG. 3C-2;

FIG. 3E-1 shows a schematic diagram of forming the first gate electrode,the source metal interconnect, and the drain metal interconnect on thestructure shown in FIG. 3D-1;

FIG. 3E-2 shows a schematic diagram of forming the first gate electrode,the source metal interconnect, and the drain metal interconnect on thestructure shown in FIG. 3D-2;

FIG. 4A shows a first structure diagram of a hybrid E-mode N-faceAlGaN/GaN HEMT with polarity inversion formed by cascoding an E-modeN-face AlGaN/GaN HEMT with polarity inversion and gate moat structureand a D-mode N-face AlGaN/GaN HEMT with polarity inversion and withoutgate dielectric layer according to the present invention;

FIG. 4B shows a second structure diagram of a hybrid E-mode N-faceAlGaN/GaN HEMT with polarity inversion formed by cascoding an E-modeN-face AlGaN/GaN HEMT with polarity inversion and gate moat structureand a D-mode N-face AlGaN/GaN HEMT with polarity inversion and withoutgate dielectric layer according to the present invention;

FIG. 4C shows a top view of a hybrid E-mode N-face AlGaN/GaN HEMT withpolarity inversion formed by cascoding an F-mode N-face AlGaN/GaN HEMTwith polarity inversion and gate moat structure and a D-mode N-faceAlGaN/GaN HEMT with polarity inversion and without gate dielectric layeraccording to the present invention;

FIG. 4D shows an equivalent circuit diagram of a hybrid E-mode N-faceAlGaN/GaN HEMT with polarity inversion formed by cascoding an E-modeN-face AlGaN/GaN HEMT with polarity inversion and gate moat structureand a D-mode N-face AlGaN/GaN HEMT with polarity inversion and withoutgate dielectric layer according to the present invention;

FIG. 4D-1 shows the distribution of various defects existing in atraditional Ga-face HEMT causing current collapse; FIG. 4D-2 shows aschematic diagram of Ga-face and N-face GaN grown on a substrate;

FIG. 5A shows a schematic diagram of forming the gate moat structure,the source ohmic-contact electrode, and the drain ohmic-contactelectrode on the epitaxial structure of N-face AlGaN/GaN according tothe present invention;

FIG. 5B-1 shows a schematic diagram of the device isolation processaccording to the first embodiment of the present invention;

FIG. 5B-2 shows a schematic diagram of the device isolation processaccording to the second embodiment of the present invention;

FIG. 5C-1 shows a schematic diagram of forming the fluorine-ionstructure on the structure shown in FIG. 5B-1;

FIG. 5C-2 shows a schematic diagram of forming the fluorine-ionstructure on the structure shown in FIG. 5B-2;

FIG. 5D-1 shows a schematic diagram of forming the gate oxide layer onthe structure shown in FIG. 5C-1;

FIG. 5D-2 shows a schematic diagram of forming the gate oxide layer onthe structure shown in FIG. 5C-2;

FIG. 5E-1 shows a schematic diagram of forming the gate electrode andthe metal interconnect on the structure shown in FIG. 5D-1;

FIG. 5E-2 shows a schematic diagram of forming the gate electrode andthe metal interconnect on the structure shown in FIG. 5D-2;

FIG. 6A shows a first structure diagram of a hybrid E-mode N-faceAlGaN/GaN HEMT with polarity inversion formed by cascoding an E-modeN-face AlGaN/GaN HEMT with polarity inversion and gate moat structureand a D-mode N-face AlGaN/GaN HEMT with polarity inversion and gatedielectric layer according to the present invention;

FIG. 69 shows a second structure diagram of a hybrid E-mode N-faceAlGaN/GaN HEMT with polarity inversion and gate moat structure formed bycascoding an E-mode N-face AlGaN/GaN HEMT with polarity inversion and aD-mode N-face AlGaN/GaN HEMT with polarity inversion and gate dielectriclayer according to the present invention;

FIG. 6C shows a top view of a hybrid E-mode N-face AlGaN/GaN HEMT withpolarity inversion and gate moat structure formed by cascoding artE-mode N-face AlGaN/GaN HEMT with polarity inversion and a D-mode N-faceAlGaN/GaN HEMT with polarity inversion and gate dielectric layeraccording to the present invention;

FIG. 6D shows an equivalent circuit diagram of a hybrid E-mode N-faceAlGaN/GaN HEMT with polarity inversion and gate moat structure formed bycascoding an E-mode N-face AlGaN/GaN HEMT with polarity inversion and aD-mode N-face AlGaN/GaN HEMT with polarity inversion and gate dielectriclayer according to the present invention;

FIG. 7A shows a schematic diagram of forming the gate moat structure,the source ohmic-contact electrode and the drain ohmic-contact electrodeon the epitaxial structure of N-face AlGaN/GaN according to the presentinvention;

FIG. 7A-1 shows a schematic diagram of the device isolation processaccording to the first embodiment of the present invention;

FIG. 7A-2 shows a schematic diagram of the device isolation processaccording to the second embodiment of the present invention;

FIG. 7B-1 shows a schematic diagram of forming the fluorine-ionstructure and the gate oxide layer on the structure shown in FIG. 7A-1according to the present invention;

FIG. 73-2 shows a schematic diagram of forming the fluorine-ionstructure and the gate oxide layer on the structure shown in FIG. 7A-2according to the present invention;

FIG. 7C-1 shows a schematic diagram of forming the gate electrode andthe metal interconnect on the structure shown in FIG. 7B-1;

FIG. 7C-2 shows a schematic diagram of forming the gate electrode andthe metal interconnect on the structure shown in FIG. 7B-2;

FIG. 8A-1 shows a first structure diagram of a hybrid SBD formed bycascoding an E-mode N-face AlGaN/GaN HEMT with polarity inversion andgate moat structure and an AlGaN/GaN SBD according to the presentinvention;

FIG. 8A-2 shows a second structure diagram of a hybrid SBD formed bycascoding an E-mode N-face AlGaN/GaN HEMT with polarity inversion andgate moat structure and an AlGaN/GaN SBD according to the presentinvention; FIG. 8B shows a top view of a hybrid SBD formed by cascodingan E-mode N-face AlGaN/GaN HEMT with polarity inversion and gate moatstructure and an AlGaN/GaN SBD according to the present invention; and.

FIG. 8C shows an equivalent circuit diagram of a hybrid SBD formed bycascoding an E, mode N-face AlGaN/GaN HEMT with polarity inversion andgate moat structure and an AlGaN/GaN SBD according to the presentinvention.

DETAILED DESCRIPTION

FIG. 1A shows a first structure diagram of the epitaxial structure ofthe N-face AlGaN/GaN HEMT according to the present invention. Theepitaxial structure 1 comprises sequentially a silicon substrate 11, aC-doped buffer layer 12, a C-doped GaN layer 13, an i-Al_(y)GaN layer14, an i-GaN channel layer 15, and an i-Al_(x)GaN layer 16. Theepitaxial structure 1 comprises the i-Al_(x)GaN layer 14. After apolarity inversion process in the active region (AlGaN/GaN/AlGaN), thei-Al_(y)GaN layer 14 can function to block buffer trapped electrons fromentering the channel layer (the i-GaN channel layer 15), and thusreducing the phenomenon of device current collapse. FIG. 1B shows asecond structure diagram of the epitaxial structure of the N-faceAlGaN/GaN HEMT according to the present invention. The mainconsideration is that if the i-Al_(y)GaN layer 14 is grown on theC-doped GaN layer 13, the problem of significant lattice mismatch willoccur. Thereby, the i-Al_(z)GaN grading buffer layer 21 will be added,where z=0.01˜0.75.

According to the first embodiment of the present invention, thestructures of FIGS. 1A and 1B can be further applied in fabricating afluorine-ion-implanted E-mode N-face AlGaN/GaN HEMT with polarityinversion and gate moat structure.

FIG. 2A shows a first structural schematic diagram of E-mode N-faceAlGaN/GaN HEMT with polarity inversion (namely, generating stress by thepassivation dielectric layer) by implanting fluorine ions into thei-Al_(x)GaN layer 16 according to the present invention. As shown in thefigure, the E-mode N-face AlGaN/GaN HEMT with polarity inversionaccording to the present invention is characterized in including theepitaxial structures 1 (as shown in FIG. 1A), shown in FIG. 1 B) ofN-face AlGaN/GaN and the fluorine-on structure 160 located in thei-Al_(x)GaN layer 16. Although the 2DEG 150 is formed in the i-GaNchannel layer 15 at the junction between the i-Al_(x)GaN layer 16 andthe i-GaN channel layer 15, due to the existence of the fluorine-ionstructure 160, the 2DEG 150 in the i-GaN channel layer 15 below thefluorine-ion structure 160 is depleted. Finally, the polarity of theactive region (i-Al_(x)GaN/i-GaN/i-Al_(y)GaN) is inverted from theN-face polarity to the Ga-face polarity by using the stress generated bythe passivation dielectric layer 70. This explains why the 2DEG 150shown in FIG. 2A is located in the i-GaN channel layer 15 at theinterface of i-Al_(x)GaN/i-GaN after the fabrication is completed: theoriginal N-face polarity has been inverted to the Ga-face polarity.

As shown in FIG. 2A, according to the present invention, the dry etchingmethod is adopted for etching the two gate moat structures 161 on thei-Al_(x)GaN layer 16 on both sides of the fluorine-ion structure 160.The main purpose of the two gate moat structures 161 is to avoid lateraldiffusion of fluorine ions at high-temperature operations, which willchange the electrical characteristics of devices. In addition, the gatemoat structures 161 enable the gate electrode to envelop a part of thefluorine-ion structure 160. Thereby, the control of the gate on thedevice will be stronger, resulting in faster device switching and lowerswitching loss.

According to the structure of the E-mode N-face AlGaN/GaN HEMT withpolarity inversion according to the present invention, a first sourceohmic-contact electrode 30 (namely, the first source electrode) and afirst drain ohmic-contact electrode 31 (namely, the first drainelectrode) are formed on the epitaxial structure 1 of N-face AlGaN/GaN.They are disposed on the surface of the i-Al_(x)GaN layer 16 of theepitaxial structure 1 of N-face AlGaN/GaN, respectively. By using dryetching, two gate moat structures 161 are formed in the i-Al_(x)GaNlayer 16 on both sides of the predetermined location for thefluorine-ion structure 160. Next, by implanting fluorine ions, thefluorine-ion structure 160 is formed. Afterwards, a first gatedielectric layer 50 is formed on the fluorine-ion structure 160, and afirst gate electrode 60 is formed on the first gate dielectric layer 50.In addition, the source metal interconnect 61 and the drain metalinterconnect 62 connected with the first source ohmic-contact electrode30 and the first drain ohmic-contact electrode 31 as well as the metalgate interconnect 601 are formed concurrently. The part labels 61, 62,601 belong to the same metal layer as the part label 60. For clarity,different part labels are used to represent the metal interconnect ofrespective electrodes. Then, the whole epitaxial wafer is coated with apassivation dielectric layer 70. By using the stress generated by thepassivation dielectric layer 70, the polarity of the active region(i-Al_(x)GaN 16/i-GaN channel layer 15/i-Al_(y)GaN layer 14) is invertedfrom the N-face polarity to the Ga-face polarity, which moves the 2DEG150 in the i-GaN channel layer 15 from the interface of i-GaN channellayer 15/i-Al_(y)GaN layer 14 to the interface of i-Al_(x)GaN 16/i-GaNchannel layer 15. Finally, etch the passivation dielectric layer 70 toexpose the bonding pads for source, drain, and gate electrodes as wellas the scribe lines between devices on the epitaxial wafer. Besides,likewise, FIG. 2B shows a second structural schematic diagram offluorine-ion-implanted E-mode N-face AlGaN/GaN HEMT with polarityinversion and gate moat structure according to the present invention.The difference between FIG. 2B and FIG. 2A is in adopting the method ofmultiple-energy destructive ion implantation 40, 41 or the method ofdrying etching 42, 43.

Please refer to FIG. 2C, which shows a top view offluorine-ion-implanted E-mode N-face AlGaN/GaN HEMT with polarityinversion and gate moat structure according to the present invention. Asshown in the figure, FIG. 2C includes a first gate bonding pad 80, asource bonding pad 82, and a drain bonding pad 83, while a first gatebonding pad 80 in FIG. 2C is also the cathode bonding pad 81. Inaddition, the locations of the i-Al_(x)GaN layer 16, the gate moatstructures 161, the first source electrode 30, the first drain electrode31, a first gate dielectric layer 50, the first gate electrode 60, thefirst source metal interconnect 61, and the first drain metalinterconnect 62 are illustrated in FIG. 2C.

In the following, the method for fabricating the first embodiment willbe illustrated. Nonetheless, the method as well as the layout for themetal interconnect is not limited to the method according to the presentembodiment.

Please refer to FIG. 3A, which shows a schematic diagram of forming themoat structure, the source ohmic-contact electrode, and the drainohmic-contact electrode on the epitaxial structure of N-face AlGaN/GaNaccording to the present invention.

Step S11: Form the source ohmic-contact electrode 30 and the drainohmic-contact electrode 31. In this step, the metal vapor depositionmethod is adopted for coating a metal layer, for example, a metal layerformed by Ti/Al/Ti/Au or Ti/Al/Ni/Au, on the epitaxial structure 1 ofN-face AlGaN/GaN. Then, the metal lift-off method is adopted forpatterning the coated metal layer and forming the first source electrode30 and the first drain electrode 31 on the epitaxial wafer (theepitaxial structure 1 of N-face AlGaN/GaN). Afterwards, after a 700˜900°C. thermal treatment for 30 seconds, the first source electrode 30 andthe first drain electrode 31 become ohmic-contact electrodes. Next, byusing dry etching, the two gate moat structures 161 are formed in thei-AlGaN layer 16 on both sides of the predetermined location for thefluorine-ion structure 160.

Please refer to FIG. 3B-1, which shows a schematic diagram of the deviceisolation process according to the first embodiment of the presentinvention. Step S12: Perform device isolation. In this step, themultiple-energy destructive ion implantation 40, 41 is adopted. Ingeneral, heavy atoms such as boron or oxygen are used for isolatingdevices. Alternatively, FIG. 3B-2 shows a schematic diagram of thedevice isolation process according to the second embodiment of thepresent invention. The method dry etching 42, 43 is adopted instead.Devices are isolated by etching the i-AlGaN layer 16, the i-GaN channellayer 15, and the i-Al_(y)GaN layer 14 of the epitaxial structure 1 ofN-face AlGaN/GaN to the highly resistive C-doped GaN layer 13.

Please refer to FIG. 3C-1, which shows a schematic diagram of formingthe fluorine-ion structure on the structure shown in FIG. 3B-1. StepS13: Implant fluorine ions. In this step, F- are implanted into thei-Al_(x)GaN layer 16 (x=0.1 ˜0.3) below the location to form the firstgate electrode 60 (as shown in FIG. 4E-1) such that the 2DEG 150 cannotbe formed in the i-GaN channel layer 15 below F-implanted region. Then,after a 425° C. thermal treatment for 600 seconds, the fluorine-ionstructure 160 will occupy stably the space inside the i-Al_(x)GaN layer16.

Moreover, the fluorine ion implantation process further includesdefining the region for implanting fluorine ions into the i-Al_(x)GaNlayer 16 using photolithography. The fluorine-ion plasma is generated inthe dry etching system or the ion implantation system using CF₄. Under aspecific electric field (or a specific voltage), the fluorine ions areimplanted into the i-Al_(x)GaN layer 16 (x=0.1˜0.3). Afterwards, after a425° C. thermal treatment for 600 seconds, the fluorine-ion structure160 will occupy stably the space inside the i-AlGaN layer 16. Besides,FIG. 3C-2 shows a schematic diagram of forming the fluorine-ionstructure on the structure shown in FIG. 3B-2. It is the same as FIG.3C-1. Hence, the details will not be described again.

Please refer to FIG. 3D-1 shows a schematic diagram of forming the firstgate dielectric layer on the structure shown in FIG. 3C-1. Step S14:Form the gate dielectric layer. In this step, PECVD is adopted fordepositing a dielectric layer for forming the first gate dielectriclayer 50. The material is selected from the group consisting of SiO_(x),SiO_(x)N_(y), or SiNi_(x); the thickness is 10˜100 nm. Next, thephotoresist is used for defining the region of the first gate dielectriclayer 50 by exposure and development. Finally, thy etching usingbuffered oxide etchant (BOE) is adopted for removing the dielectriclayer outside the region of the first gate dielectric layer 50; only theregion for forming the first gate dielectric layer 50 is reserved.Afterwards, the photoresist is removed by using photoresist stripper. Inaddition, FIG. 3D-2 shows a schematic diagram of forming the first gatedielectric layer on the structure shown in FIG. 3C-2. It is the same asFIG. 3D-1. Hence, the details will not be described again.

Please refer to FIG. 3E-1, which shows a schematic diagram of formingthe first gate electrode, the source metal interconnect, and the drainmetal interconnect on the structure shown in FIG. 3D-1. Step S15:Perform metal interconnect. This step includes performing metal coating.By combing metal vapor deposition and metal lift-off method, the Ni/Aumetal layer is patterned to form a first gate electrode 60, the gatemetal interconnect 601 (including forming the first gate bonding pad 80shown in FIG. 2C), the source metal interconnect 61 (including thesource bonding pad 82), and the drain metal interconnect 62 (includingthe drain bonding pad 83). For metal circuit layout, for example, thefirst gate electrode 60 on the fluorine-ion structure 160 and the firstgate dielectric layer 50 is connected with the first gate bonding pad80. In addition, FIG. 3E-2 shows a schematic diagram of forming thefirst gate electrode, the source metal interconnect, and the drain metalinterconnect on the structure shown in FIG. 3D-2. It is the same as FIG.3E-1. Hence, the details will not be described again.

Next, step S16: Deposit and pattern the dielectric layer. In this step,PECVD is adopted for depositing a passivation dielectric layer 70. Thematerial is selected from the group consisting of SiO_(x), SiO_(x)N_(y),or SiN_(x); the thickness is greater than 2000 A. This passivationdielectric layer 70 should be thick enough before it can generate enoughstress on devices and altering their polarity. Finally, pattern thepassivation dielectric layer 70 for exposing the bonding pads 82, 83 (aswell as exposing the first gate bonding pad 80 shown in FIG. 2C). Forexample, dry etching using BOE can expose the bonding pads for futurewiring. After this step, the fluorine-ion-implanted E-mode N-faceAlGaN/GaN HEMT with polarity inversion shown in FIG. 2A and 2B can beformed.

Furthermore, the dashed circles labeled in FIGS. 3E-1 and 3E-2 will formfringe capacitors 51, 52, which will result in the field plate effect.The main function of the field plate effect is to distribute thehigh-density electric field below the first gate electrode 60. Inaddition to increasing the breakdown voltage Vds between the drain andthe source of the HEMT, it also suppresses the electron trapping effectbelow the first gate electrode 60 and hence reducing current collapseduring the operation of the HEMT.

The second embodiment: FIG. 5A and FIG. 5B show a first and a secondstructure diagram of a hybrid E-mode N-face AlGaN/GaN HEMT with polarityinversion formed by cascoding an E-mode N-face AlGaN/GaN HEMT withpolarity inversion and gate moat structure and a D-mode N-face AlGaN/GaNHEMT with polarity inversion and without gate dielectric layer accordingto the present invention. As shown in the figures, the dry etchingmethod is adopted for etching the two gate moat structures 161 on thei-Al_(x)GaN layer 16 on both sides of the predetermined location for thefluorine-ion structure 160. Next, fluorine ions are implanted into thei-AlxGaN layer 16 below the first gate electrode 60 to form a hybridE-mode N-face AlGaN/GaN HEMT with polarity inversion formed by cascodingan E-mode N-face AlGaN/GaN HEMT with polarity inversion and gate moatstructure and a D-mode N-face AlGaN/GaN HEMT with polarity inversion andwithout gate dielectric layer.

The hybrid E-mode AlGaN/GaN HEMT according to the present invention cansolve the problem occurring frequently in general F-mode AlGaN/GaNHEMTs. The problem is that the conduction current Ids will increase asthe drain-to-source voltage increases when the device is operated in thesaturation region (with the gate voltage Vgs fixed). The main reason isbecause the whole channel in the i-GaN channel layer 15 is not pinchedoff in the depletion region. Thereby, by cascoding a D-mode HEMT, theproblem can be solved because the saturation current of the D-mode HEMTcan be used to limit the saturation current of the E-mode HEMT.

As shown in FIGS. 4A and 4B, the hybrid E-mode AlGaN/GaN HEMT withpolarity inversion and gate moat structure according to the secondembodiment includes the device structure of the epitaxial structure ofN-face AlGaN/GaN with polarity inversion according to the presentinvention. The device structure is divided into a left region L1 and aright region R1. The left region L1 includes an E-mode AlGaN/GaN HEMTwith polarity inversion of GaN and gate moat structure, which includes afluorine-ion structure 160. Although the 2DEG 150 is formed in the i-GaNchannel layer 15 at the junction of i-Al_(x)GaN layer 16/i-GaN channellayer 15, thanks to the existence of the fluorine-ion structure 160, the2DEG 150 in the i-GaN channel layer 15 below the fluorine-ion structure160 is depleted. The right region R1 includes a D-mode N-face AlGaN/GaNHEMT with polarity inversion and without gate dielectric layer.

Please refer to FIG. 4C, which shows a top view of a hybrid E-modeN-face AlGaN/GaN HEMT with polarity inversion formed by cascoding anE-mode. N-face AlGaN/GaN HEMT with polarity inversion and gate moatstructure and a D-mode N-face AlGaN/GaN HEMT with polarity inversion andwithout gate dielectric layer according to the present invention. Asshown in the figure, the source metal interconnect 61 is formed on thefirst source electrode 30 of the E-mode N-face AlGaN/GaN HEMT withpolarity inversion of GaN and gate moat structure. The first sourceelectrode 30 is connected to the second gate electrode 63 of the D-modeN-face AlGaN/GaN HEMT with polarity inversion and without gatedielectric layer via the source metal interconnect 61. In addition, thefirst drain metal interconnect and the second source metal interconnectare connected electrically. In the hybrid E-mode N-face AlGaN/GaN HEMTwith polarity inversion, the S in FIG. 4C is a source; the G is a gate;and the D is a drain.

The fabrication process according to the present embodiment will bedescribed as follows. FIG. 5A shows a schematic diagram of forming thesource ohmic-contact electrode and the drain ohmic-contact electrode onthe epitaxial structure of N-face AlGaN/GaN according to the presentinvention. First, an epitaxial structure of N-face AlGaN/GaN accordingto the present invention is provided. The left region L1 is set tofabricate the E-mode N-face AlGaN/GaN HEMT with polarity inversion ofGaN and gate moat structure, while the right region R1 is set tofabricate the D-mode N-face AlGaN/GaN HEMT with polarity inversion andwithout gate dielectric layer. Nonetheless, the settings for the leftand right regions L1, R1 can be altered undoubtedly according torequirements.

Next, as the step S11 described above, form the first source electrode30, the first drain electrode 31, the second source electrode 32, andthe second drain electrode 33. Then, after a 700˜900° C. thermaltreatment for 30 seconds, the first source electrode 30, the first drainelectrode 31, the second source electrode 32, and the second drainelectrode 33 become the first source ohmic-contact electrode 30, thefirst drain ohmic-contact electrode 31, the second source ohmic-contactelectrode 32, and the second drain ohmic-contact electrode 33.Afterwards, the dry etching method is adopted for etching the two gatemoat structures 161 on the i-Al_(x)GaN layer 16 on both sides of thepredetermined location for fluorine-ion structure 160, as shown in FIG.4B.

Please refer to FIG. 5B-1, which shows a schematic diagram of the deviceisolation process according to the first embodiment of the presentinvention. The isolation process between the device (transistor) in theleft region L1 and the device (transistor) in the right region R1 isperformed by using the destructive ion implantation 40, 41, 44, 45 shownin FIG. 5B-1 or the dr<etching of the epitaxial structure 42, 43, 46, 47of the N-face AlGaN/GaN shown in FIG. 5B-2 to the highly resistiveC-doped GaN layer 13. Besides, FIG. 5B-2 shows a schematic diagram ofthe device isolation process according to the second embodiment of thepresent invention. This is similar to FIG. 5B-1. Hence, the details willnot be described again.

Please refer to FIG. 5C-1, which shows a schematic diagram of formingthe fluorine-ion structure on the structure shown in FIG. 5B-1. As shownin the figure, F- are implanted into the i-Al_(x)GaN layer 16 (x=01˜0.3)below the location to form the first gate electrode 60. As shown in FIG.4B, such that the 2DEG 150 cannot be formed in the i-GaN channel layer15 therebelow. Then, after a 425° C. thermal treatment for 600 seconds,the fluorine-ion structure 160 will occupy stably the space inside thei-Al_(x)GaN layer 16. Besides, FIG. 5C-2 shows a schematic diagram offorming the fluorine-ion structure on the structure shown in FIG. 5B-2.This is similar to FIG. 5C-1. Hence, the details will not be describedagain.

Please refer to FIG. 5D-1, which shows a schematic diagram of formingthe gate dielectric layer 50 layer on the structure shown in FIG. 5C-1.As shown in the figure, PECVD is adopted for depositing a dielectriclayer for forming the first gate dielectric layer 50. The material isselected from the group consisting of SiO, SiO_(x)N_(y), or SiN_(x); thethickness is 10˜100 nm. Next, the photoresist is used for defining theregion of the first gate dielectric layer 50 by exposure anddevelopment. Finally, dry etching using BOE is adopted for removing thedielectric layer outside the region of the first gate dielectric layer50; only the region for forming the first gate dielectric layer 50 isreserved. Afterwards, the photoresist is removed by using photoresiststripper. In addition, FIG. 5D-2 shows a schematic diagram of formingthe gate dielectric layer on the structure shown in FIG. 5C-2. It issimilar to FIG. 5D-1. Hence, the details will not be described again.

Please refer to FIG. 5E-1, which shows a schematic diagram of formingthe gate electrode and the metal interconnect on the structure shown inFIG. 5D-1. As shown in the figure, by combing metal vapor deposition andmetal lift-off method, the first gate electrode 60, the first sourcemetal interconnect 61 (including the source bonding pad 82 as shown inFIG. 4C), the first drain metal interconnect 62, the second gateelectrode 63, the second source metal interconnect 64, and the seconddrain metal interconnect 65 (including the drain bonding pad 83 as shownin FIG. 4C). Of course, in this step, the first gate metal interconnect67 (including the first gate bonding pad 80 as shown in FIG. 4C)connected electrically with the first gate electrode 60 can he formedconcurrently. Besides, the first gate electrode 60, the first sourcemetal interconnect 61, the first drain metal interconnect 62, the secondgate electrode 63, the second source metal interconnect 64, and thesecond drain metal interconnect 65 are formed by metal coating. Thefirst source metal interconnect 61 and the second gate electrode 63 areconnected electrically; the first drain metal interconnect 62 and thesecond source metal interconnect 64 are connected electrically. FIG.5E-2 shows a schematic diagram of forming the gate electrode and themetal interconnect on the structure shown in FIG. 5D-2. It is similar toFIG. 5E-1. Hence, the details will not be described again.

Next, likewise, PECVD is adopted for depositing a passivation dielectriclayer 70 with compressive stress (dielectric constant n˜1.45) or withtensile stress (dielectric constant n˜2.0). The material is selectedfrom the group consisting of SiO_(x), SiO_(x)N_(y), or SiN_(x); thethickness is greater than 200 nm. Then the i-Al_(x)GaN layer 16/thei-GaN channel layer 15/the i-Al_(y)GaN layer 14 in the active region ofthe epitaxial layer will be inverted from the N-face polarity to theGa-face polarity (polarity inversion), enabling the fluorine-ionstructure 160 to deplete the 2DEG 150 easier. Finally, the passivationdielectric layer 70 is patterned to expose the bonding pads 80, 82, 83in FIG. 5C and hence completing the structure of FIGS. 4A and 4B.

Furthermore, the dashed circles labeled in FIG. 4A will form fringecapacitors 51, 52, which will result in the field plate effect. The mainfunction of the field plate effect is to distribute the high-densityelectric field below the first gate electrode 60. In addition toincreasing the breakdown voltage Vds between the drain and the source ofthe HEMT, it also suppresses the electron trapping effect below thefirst gate electrode 60 and hence reducing current collapse during theoperation of the HEMT.

The structure shown in FIG. 4D-1 is a Ga-face HEMT structure accordingto the prior art. Owing to the downward polarization (spontaneouspolarization) and the piezoelectric effect, positive charges +σ_(pol)will accumulate at the bottom of AlGaN while negative charges −σ_(pol)will accumulate at the top of AlGaN. In addition, σ_(T) (donor-likesurface traps) are just the so-called surface traps, which will captureelectrons and result in current collapse.

According to the above description, as the passivation dielectric layer70 in the N-face epitaxial structures 1, 2 according to the presentinvention becomes thicker, the compressive or expansive stress exerteddownwards by the passivation dielectric layer 70 becomes greater. Whenthe stress reaches a certain level, the i-Al_(x)GaN layer 16/the i-GaNchannel layer 15/the i-Al_(y)GaN layer 14 in the active region of theepitaxial layer will be inverted from the N-face polarity to the Ga-facepolarity. At this time, the 2DEG 150 in the i-GaN channel layer 15 atthe junction of the i-GaN channel layer 15/the i-Al_(y)GaN layer 14 willbe moved to the junction of the i-Al_(x)GaN layer 16/the i-GaN channellayer 15. The accompanying advantages include first, the surface trapsin the N-face i-Al_(x)GaN layer 16 are fewer. Thereby, the few shallowtraps formed previously can be used to release the electrons captured bythe surface traps in extremely small current. Secondly, because thebandgap of the i-AlGaN layer 14 is wider, it can be used to block theelectrons of buffer traps from entering the i-GaN channel layer 15.

Moreover, please refer to FIG. 4D-2. The surface of the i-Al_(x)GaNlayer 16 on the N-face epitaxy surface includes compensating negativecharges. Thereby, when the passivation dielectric layer 70 (SiO_(x) orSiN_(x)) starts to be deposited, due to the compensating negativecharges on the surface of the i-AlGaN layer 16, the oxygen ions (O²⁻) ornitrogen ions (N³⁻) generated in the plasma will not bond with thecompensating negative charges on the surface of i-Al_(x)GaN nor undergosurface reconstruction. On the contrary, micro traces of vacancies willbe formed therebetween. This vacancy defects are shallow traps innature, meaning that electrons can be captured and released with ease.Thereby, as the surface traps capture electrons, the electrons areeasily grabbed by the vacancies. Then the electrons will escape from thesurface of i-Al_(x)GaN by hopping between the vacancies. This method cansolve the current collapse effect caused by the surface traps in thei-Al_(x)GaN layer 16.

Please refer to FIG. 6A and FIG. 6B, which show a first and a secondstructure diagram of a hybrid E-mode N-face AlGaN/GaN HEMT with polarityinversion formed by cascoding an E-mode N-face AlGaN/GaN HEMT withpolarity inversion and gate moat structure and a D-mode N-face AlGaN/GaNHEMT with polarity inversion and gate dielectric layer according to thepresent invention. As shown in the figures, according to the thirdembodiment of the present invention, fluorine ions are implanted intothe i-AlxGaN layer 16 (x=0.1˜0.3) below the first gate electrode 60 toform a hybrid E-mode N-face AlGaN/GaN HEMT with polarity inversionformed by cascoding an E-mode N-face AlGaN/GaN HEMT with polarityinversion and gate moat structure and a D-mode N-face AlGaN/GaN HEMTwith polarity inversion and gate dielectric layer 50.

As shown in FIGS. 6A and 6B, the hybrid E-mode AlGaN/GaN HEMT withpolarity inversion according to the third embodiment includes the devicestructure of the epitaxial structure of N-face AlGaN/GaN according tothe present invention. The device structure is divided into a leftregion L1 and a right region R1. The left region L1 includes an E-modeAlGaN/GaN HEMT with polarity inversion of GaN and gate moat structure,which includes a fluorine-ion structure 160. Although the 2DEG 150 isformed in the i-GaN channel layer 15 at the junction of i-AlxGaN layer16/i-GaN channel layer 15, due to the existence of the fluorine-ionstructure 160, the 2DEG- 150 in the i-GaN channel layer 15 below thefluorine-ion structure 160 is depleted. The right region R1 includes aD-mode N-face AlGaN/GaN HEMT with polarity inversion and gate dielectriclayer. The D-mode AlGaN/GaN HEMT includes a second gate dielectric layer53.

Please refer to FIG. 6C, which shows a top view of a hybrid E-modeN-face AlGaN/GaN HEMT with polarity inversion and gate moat structureformed by cascoding an E-mode N-face AlGaN/GaN HEMT with polarityinversion and a D-mode N-face AlGaN/GaN HEMT with polarity inversion andgate dielectric layer according to the present invention. As shown inthe figure, the D-mode. N-face AlGaN/GaN HEMT with polarity inversionand gate dielectric layer includes the second gate dielectric layer 53.The rest are similar to FIG. 4C. Hence, the details will not bedescribed again.

Please refer to FIG. 7A-1, which shows a schematic diagram of the deviceisolation process according to the first embodiment of the presentinvention. First, as the steps in the second embodiment, an epitaxialstructure of N-face AlGaN/GaN according to the present invention isprovided. The left region L1 is set to fabricate the E-mode N-faceAlGaN/GaN HEMT with polarity inversion and gate moat structure, whilethe right region R1 is set to fabricate the D-mode N-face AlGaN/GaN HEMTwith polarity inversion and gate dielectric layer. Next, as thefabrication method described above, the first source electrode 30, thefirst drain electrode 31, the second source electrode 32, and the seconddrain electrode 33 are formed on the epitaxial structure of N-faceAlGaN/GaN. Afterwards, the device isolation process is performed. Inaddition, FIG. 7A-2 shows a schematic diagram of the device isolationprocess according to the second embodiment of the present invention. Itis similar to FIG. 7A-1. Hence, the details will be not described again.

Please refer to FIG. 7B-1, which shows a schematic diagram of formingthe fluorine-ion structure and the gate oxide layer on the structureshown in FIG. 8A-1 according to the present invention. Next, fabricatethe first gate dielectric layer 50 in the left region L1 (the E-modeHEW) and the second gate dielectric layer 53 in the right region R1 (theD-mode HEMT). The steps are illustrated as follows. PECVD is adopted fordepositing a dielectric layer. The material is selected from the groupconsisting of SiO_(x), SiO_(x)N_(y), or SiN_(x); the thickness is1.0˜1.00 nm. Next, the photoresist is used for defining the region ofthe first gate dielectric layer 50 and the region of the second gatedielectric layer 53 by exposure and development. Finally, dry etchingusing BOE is adopted for removing the dielectric layer outside theregion of the first gate dielectric layer 50 and the region of thesecond gate dielectric layer 53; only the region for forming the firstgate dielectric layer 50 and the region for forming the second gatedielectric layer 53 are reserved. Afterwards, the photoresist is removedby using photoresist stripper. In addition, FIG. 7B-2 shows a schematicdiagram of forming the fluorine-ion structure and the gate oxide layeron the structure shown in FIG. 7A-2 according to the present invention.It is similar to FIG. 7B-1. Hence, the details will be not describedagain.

Please refer to FIG. 7C-1, which shows a schematic diagram of formingthe gate electrode and the metal interconnect on the structure shown inFIG. 7B-1. As shown in the figure, by using metal vapor deposition(generally, Ni/Au) and metal lift-off method, the first gate electrode60, the first source metal interconnect 61, the first drain metalinterconnect 62, the second gate electrode 63, the second source metalinterconnect 64, and the second drain metal interconnect 65 can beformed. Concurrently, the metal wiring required for device operations,such as the first gate bonding pad 80 connected with the first gateelectrode 60, can be formed. Nonetheless, the top views in the figuresaccording to the present invention are not used for limiting the scopeof the present invention. In addition, FIG. 7C-2 shows a schematicdiagram of forming the gate electrode and the metal interconnect on thestructure shown in FIG. 7B-2. It is similar to FIG. 7C-1. Hence, thedetails will be not described again.

Next, likewise, PECVD is adopted for depositing a passivation dielectriclayer 70 with compressive stress (dielectric constant n˜1.45) or withtensile stress (dielectric constant n˜2.0). The material is selectedfrom the group consisting of SiO, SiO_(x)N_(y), or SiN_(x); thethickness is greater than 200 nm. Then the i-Al_(x)GaN layer 16/thei-GaN channel layer 15/the i-Al_(y)GaN layer 14 in the active region ofthe epitaxial layer will be inverted from the N-face polarity to theGa-face polarity (polarity inversion). Furthermore, the N-face epitaxialstructures 1, 2 and the passivation dielectric layer 70 according to thepresent invention can overcome the problem of current collapse. This isbecause as the passivation dielectric layer 70 becomes thicker, thecompressive or tensile stress exerted downwards by the passivationdielectric layer 70 becomes greater. When the stress reaches a certainlevel, the i-AlGaN layer 16/the i-GaN channel layer 15/the i-Al_(y)GaNlayer 14 in the active region of the epitaxial layer will be invertedfrom the N-face polarity to the Ga-face polarity. At this time, the 2DEG1.50 in the i-GaN channel layer 15 at the junction of the i-GaN channellayer 15/the i-Al%GaN layer 14 will be moved to the junction of thei-AlGaN layer 16/the i-GaN channel layer 15. The accompanying advantagesinclude first, the surface traps in the N-face i-Al_(x)GaN layer 16 arefewer. Thereby, the few shallow traps formed previously can be used torelease the electrons captured by the surface traps in extremely smallcurrent. Secondly, because the bandgap of the i-Al_(y)GaN layer 14 iswider, it can be used to block the electrons of buffer traps fromentering the i-GaN channel layer 15. Finally, the passivation dielectriclayer 70 is patterned to expose the bonding pads and hence completingthe structure of FIGS. 6.A and 6B.

Furthermore, the first gate electrode 60 and the first gate dielectriclayer 50 will form fringe capacitors 51, 52, which will result in thefield plate effect. The main function of the field plate effect is todistribute the high-density electric field below the first gateelectrode 60 and the second gate electrode 63. In addition to increasingthe breakdown voltage Vds between the drain and the source of the HEMT,it also suppresses the electron trapping effect below the first gateelectrode 60 and the second gate electrode 63, and hence reducingcurrent collapse during the operation of the HEMT.

Please refer to FIG. 8A-1, which shows a first structure diagram of ahybrid SBD formed by cascoding an E-mode N-face AlGaN/GaN HEMT withpolarity inversion and gate moat structure and an AlGaN/GaN SBDaccording to the present invention. According to the fourth embodimentof the present invention, a hybrid N-face AlGaN/GaN SBD with polarityinversion is formed by cascoding an E-mode N-face AlGaN/GaN HEMT withpolarity inversion of GaN and gate moat structure and an N-faceAlGaN/GaN SBD with polarity inversion of GaN. The anode 900 of theN-face AlGaN/GaN SBD with polarity inversion is connected electricallywith the first gate electrode 60. In addition, the first gate electrode60, the anode metal 901, the cathode metal 93, and the cathode metalinterconnect 66 can be formed concurrently. The anode 90 of the N-faceAlGaN/GaN SBD with polarity inversion is applied with a positivevoltage, in addition to turning on the SBD, the anode 90 also applies apositive voltage to the first gate electrode 60, making the E-modeN-face AlGaN/GaN HEMT with polarity inversion and gate moat structureturned on completely. Thereby, currents can be supplied to the cathode91 smoothly. As the cathode 91 (the cathode metal 93) is supplied with apositive voltage, the voltage Vgs of the E-mode N-face AlGaN/GaN HEWwith polarity inversion and gate moat structure is negative. Thereby,the E-mode N-face AlGaN/GaN HEMT with polarity inversion and gate moatstructure is turned off, which protects the N-face AlGaN/GaN SBD withpolarity inversion from reverse-bias breakdown. Besides, because thecurrent of the E-mode N-face AlGaN/GaN HEMT with polarity inversion andgate moat structure owns a negative temperature coefficient while thecurrent of the N-face AlGaN/GaN SBD with polarity inversion owns apositive temperature coefficient, these two devices are complementaryafter cascoding. Accordingly, the currents of the hybrid device will beinfluenced easily by temperature given a fixed voltage.

This hybrid N-face AlGaN/GaN SBD with polarity inversion ischaracterized in that, as described above, no 2DEG 150 can exist in GaNbelow the first gate electrode 60 unless a positive voltage is applied.Accordingly, when the cathode 91 is applied with a reverse voltage, thereverse: bias breakdown voltage can be increased effectively and thereverse leakage current can be suppressed.

As shown in FIGS. 8A-1 and 8A-2, the hybrid N-face AlGaN/GaN SBD withpolarity inversion according to the fourth embodiment mainly comprisesthe epitaxial structure of N-face AlGaN/GaN according to the presentinvention and is divided into a left region L1 and a right region R1. AnE-mode N-face AlGaN/GaN HEAT with polarity inversion of GaN and gatemoat structure is formed in the left region L1 and includes afluorine-ion structure 160. Although the 2DEG 150 is formed in the i-GaNchannel layer at the junction of the i-AlGaN layer 16/i-GaN channellayer 15, owing to the existence of the fluorine-ion structure 160, the2DEG 150 in the i-GaN channel layer 15 and below the fluorine-ionstructure 160 will be depleted. Besides, an N-face AlGaN/GaN SBD withpolarity inversion having an anode field plate is formed in the rightregion R1.

The difference between the fabrication process according to the fourthembodiment and those according to the previous embodiments is that,after the ion implantation process of fluorine ions into the epitaxialstructure of N-face AlGaN/GaN, the first source ohmic-contact electrode30 and the first drain ohmic-contact electrode 31 are formed in the leftregion L1. Concurrently, the cathode ohmic-contact electrode 34 (cathodemetal electrode) of the SBD is formed in the right region R1.Afterwards, an anode field-plate dielectric layer 92 is formed in theright region R1. Concurrently, the first gate dielectric layer 50 isformed in the left region L1.

Next, as described previously, form the first gate electrode 60 and themetal interconnect, including the first gate metal interconnect of thehybrid N-face AlGaN/GaN SBD with polarity inversion, the first sourcemetal interconnect, the anode metal interconnect of the N-face AlGaN/GaNSBD with polarity inversion, and related metal wiring. In addition, apatterned passivation dielectric layer 70 is formed on the epitaxialstructure of N-face AlGaN/GaN for exposing a portion of the passivationdielectric layer. Then the top view as shown in FIG. 8B will be formed.

FIG. 9B shows a top view of a hybrid AlGaN/GaN SBD formed by cascodingan E, mode N-face AlGaN/GaN HEMT with polarity inversion and gate moatstructure and an AlGaN/GaN SBD according to the present invention. Asshown in the figure, the anode electrode and the first gate electrode 60of the hybrid N-face AlGaN/GaN SBD with polarity inversion use the firstgate electrode 60 as the metal interconnect and connected electricallyto each other (below the passivation dielectric layer 70). In addition,the anode metal interconnect of the hybrid N-face AlGaN/GaN SBD withpolarity inversion includes the anode bonding pad 83, while the cathodemetal 93 includes the source bonding pad 82.

What is claimed is:
 1. An epitaxial structure of N-face AlGaN/GaN,comprising: a silicon substrate; a C-doped buffer layer, located on saidsilicon substrate; a C-doped GaN layer, located on said C-doped bufferlayer; an i-Al_(y)GaN layer, located on said C-doped GaN layer; an i-GaNchannel layer, located on said i-Al_(y)GaN layer; an i-Al_(x)GaN layer,located on said i-GaN channel layer; a fluorine-ion structure, locatedin said i-Al_(x)GaN layer; a gate moat structure, located on saidi-AlGaN layer and surrounding both sides of said fluorine-ion structure;and a first gate dielectric layer, located on said fluorine-ionstructure; where x=0.1˜0.3 and y=0.05˜0.75.
 2. The structure of claim 1,wherein an i-Al_(z)GaN grading buffer layer is further disposed betweensaid C-doped GaN layer and said i-A_(y)GaN layer and z=0.01˜0.75.
 3. Thestructure of claim 1, wherein the two-dimensional electron gas in saidi-GaN channel layer is depleted below said fluorine-ion structure andthe two-dimensional electron gas is located at the junction between saidi-GaN channel layer and said i-Al_(y)GaN layer,
 4. A hybridenhancement-mode N-face AlGaN/GaN high electron mobility transistor withpolarity inversion, characterized in: an epitaxial structure of N-faceAlGaN/GaN, divided into a left region and a right region, andcomprising: a silicon substrate; a C-doped buffer layer, located on saidsilicon substrate; a C-doped GaN layer, located on said C-doped bufferlayer; an i-Al_(y)GaN layer, located on said C-doped GaN layer; an i-GaNchannel layer, located on said i-Al_(y)GaN layer; and an i-Al_(x)GaNlayer, located on said i-GaN channel layer; an enhancement-mode N-faceAlGaN/GaN high electron mobility transistor with polarity inversion ofGaN and gate moat structure, located in said left region, including saidfluorine-ion structure, the two-dimensional electron gas below saidfluorine-ion structure being depleted, depositing a passivationdielectric layer with compressive stress (dielectric constant n˜1.45) orwith tensile stress (dielectric constant n˜2.0) and with thicknessgreater than 200 nanometers, and inverting said i-Al_(x)GaN layer/saidi-GaN channel layer/said i-Al_(y)GaN layer in the active region of saidepitaxial layer from the N-face polarity to the Ga-face polarity forraising said two-dimensional electron gas from the junction of saidi-GaN channel layer/said i-Al_(y)GaN layer to the junction of said i-GaNchannel layer/said i-Al_(x)GaN layer; and a depletion-mode N-faceAlGaN/GaN high electron mobility transistor with polarity inversion ofGaN and gate dielectric layer, located in said right region, andincluding a second gate dielectric layer.
 5. The hybrid enhancement-modeN-face AlGaN/GaN high electron mobility transistor with polarityinversion of claim 4, characterized in: a first gate electrode, formedon said first gate dielectric layer; a first source electrode, formed insaid left region of said epitaxial structure of N-face AlGaN/GaN; afirst drain electrode, formed in said left region of said epitaxialstructure of N-face AlGaN/GaN; a second gate electrode, formed on saidsecond gate dielectric layer; a second source electrode, formed in saidright region of said epitaxial structure of N-face AlGaN/GaN; a seconddrain electrode, formed in said right region of said epitaxial structureof N-face AlGaN/GaN; a gate metal interconnect, coupled to said firstelectrode, and having a gate bonding pad; a first source metalinterconnect, formed on said first source electrode, and having a sourcebonding pad; a first drain metal interconnect, formed on said firstdrain electrode; a second source metal interconnect, formed on saidsecond source electrode; and a second drain metal interconnect, formedon said second drain electrode, and having a drain bonding pad; wheresaid first gate electrode, said first gate metal interconnect, saidfirst source metal interconnect, said first drain metal interconnect,said second gate electrode, said second gate metal interconnect, saidsecond source metal interconnect, and said second drain metalinterconnect are formed by primary metal coating; said first sourcemetal interconnect and said second gate electrode are connectedelectrically; and said first drain metal interconnect and said secondsource metal interconnect are connected electrically.
 6. A hybrid N-faceAlGaN/GaN Schottky barrier diode with polarity inversion, characterizedin: an epitaxial structure of N-face AlGaN/GaN, divided into a leftregion and a right region, and comprising: a silicon substrate; aC-doped buffer layer, located on said silicon substrate; a C-doped GaNlayer, located on said C-doped buffer layer; an i-Al_(y)GaN layer,located on said C-doped GaN layer; an i-GaN channel layer, located onsaid i-Al_(y)GaN layer; and an i-Al_(x)GaN layer, located on said i-GaNchannel layer; an enhancement-mode N-face AlGaN/GaN high electronmobility transistor with polarity inversion of GaN and gate moatstructure, located in said left region, including said fluorine-ionstructure, the two-dimensional electron gas below said fluorine-ionstructure being depleted, depositing a passivation dielectric layer withcompressive stress (dielectric constant n˜1.45) or with tensile stress(dielectric constant n˜2.0) and with thickness greater than 200nanometers, and inverting said i-AlGaN layer/said i-GaN channellayer/said i-Al_(y)GaN layer in the active region of said epitaxiallayer from the N-face polarity to the Ga-face polarity for raising saidtwo-dimensional electron gas from the junction of said i-GaN channellayer/said i-Al_(y)GaN layer to the junction of said i-GaN channellayer/said i-Al_(x)GaN laser; and an N-face AlGaN/GaN Schottky barrierdiode with polarity inversion, located in said right region, includingan anode field-plate dielectric layer located in said right region, andusing the stress of said passivation dielectric layer to invert saidi-Al_(x)GaN layer/said i-GaN channel layer/said i-Al_(y)GaN layer in theactive region of said epitaxial layer and raise said two-dimensionalelectron gas from the junction of said i-GaN channel layer/saidi-Al_(y)GaN layer to the junction of said i-GaN channel layer/saidi-Al_(x)GaN layer.
 7. The hybrid N-face AlGaN/GaN Schottky barrier diodewith polarity inversion of claim 6, characterized in: said epitaxialstructure of N-face AlGaN/GaN; a first gate electrode, formed on saidfirst gate dielectric layer, and said first gate dielectric layer formedon said fluorine-ion structure; a first source electrode, formed in saidleft region of said epitaxial structure of N-face AlGaN/GaN; a firstdrain electrode, formed in said left region of said epitaxial structureof N-face AlGaN/GaN; a cathode electrode, formed in said right region ofsaid epitaxial structure of N-face AlGaN/GaN; a gate metal interconnect,coupled to said first gate electrode; a first source metal interconnect,formed on said first source electrode, and having a source bonding pad;a first drain metal interconnect, formed on said first drain electrode;a cathode metal interconnect, formed on said cathode electrode; and ananode metal interconnect, formed on said anode field-plate dielectriclayer, and having an anode bonding pad; where said first gate electrode,said first gate metal interconnect, said first source metalinterconnect, said first drain metal interconnect, said cathode metalinterconnect, and said anode metal interconnect are formed by primarymetal coating; said first drain metal interconnect and said cathodemetal interconnect are connected electrically and said first gate metalinterconnect and said anode metal interconnect are connectedelectrically.